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| polyfet rf devices SA702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 50.0 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 110 Watts Junction to Case Thermal Resistance o 1.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 6.5 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 13 85 TYP 50.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.40 A, Vds = 28.0 V, F = Idq = 0.40 A, Vds = 28.0 V, F = 175 MHz 175 MHz VSWR Relative Idq = 0.40 A, Vds = 28.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2.4 0.50 14.00 100.0 6.0 64.0 MIN 65 2.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 40.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.20 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 5.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 04/10/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SA702 POUT VS PIN GRAPH SA702 Pin vs Pout Freq=175MHz, VDS=28V, Idq=.4A 70 60 50 40 14.00 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Pin in Watts 10 CAPACITANCE VS VOLTAGE S1A 2 DICE CAPACITANCE 17.00 1000 16.00 Ciss Pout 15.00 100 Coss Gain Efficiency@50W = 85% 13.00 12.00 1 0 5 10 15 Crss 11.00 20 25 30 VDS IN VOLTS IV CURVE S1A 2 DIE IV 16 14 12 ID IN AMPS 10 8 6 4 2 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6vINVOLTS vg=8v 14 0 16 18 vg=12v 20 ID & GM VS VGS 100.00 S1A 2 DIE ID & GM Vs VG Id Id in amps; Gm in mhos 10.00 1.00 gM 0.10 0 2 4 6 8 Vgs in Volts 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 04/10/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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